CGH55030F2
Specifiche
Transistor Polarity ::
N-Channel
Tecnologia::
Gan.
Product Category ::
RF JFET Transistors
Mounting Style ::
Screw
Gain ::
12 dB
Transistor Type ::
HEMT
Output Power ::
25 W
Package / Case ::
440166
Maximum Operating Temperature ::
+ 150 C
Vds - Drain-Source Breakdown Voltage ::
120 V
Packaging ::
Tray
Maximum Drain Gate Voltage ::
-
Id - Continuous Drain Current ::
3 A
Vgs - Gate-Source Breakdown Voltage ::
- 10 V to + 2 V
Pd - Power Dissipation ::
-
Manufacturer ::
Wolfspeed / Cree
Introduzione
Il CGH55030F2, di Wolfspeed/Cree, è un transistor RF JFET. Quello che offriamo ha un prezzo competitivo nel mercato globale, che sono in parti originali e nuove.Se desiderate saperne di più sui prodotti o richiedere un prezzo inferiore, contattateci tramite la chat online o inviateci un preventivo!
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| Immagine | parte # | Descrizione | |
|---|---|---|---|
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|
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|
|
|
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RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
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|
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|
CGHV96050F2 |
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
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|
|
|
CGH40090PP |
RF JFET Transistors GaN HEMT DC-2.5GHz, 90 Watt
|
|
|
|
CGHV1J025D |
RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
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|
|
|
|
CGH27060F |
RF JFET Transistors GaN HEMT VHF-3.0GHz, 60 Watt
|
|
|
|
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RF JFET Transistors GaN HEMT DC-4.0GHz, 50 Watt
|
|
|
|
CGH60060D |
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
|
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